DIRECT ELECTRON-BEAM WRITING WITH HIGH ASPECT RATIO FOR FABRICATING ION-BEAM LITHOGRAPHY MASK

Byoung-Nam Lee and Yong-Hoon Cho
Department of Physics, Chungbuk National University, Cheongju 361-763, Korea
Young-Seok Kim, Wan Hong, and Hyung-joo Woo
Particle Beam Application Team, Korea Institute of Geoscience and Mineral Resources, Daejeon, 305-350, Korea

Abstract

We have fabricated an ion beam mask having a narrow pattern with high aspect ratio for the application of ion-beam lithography. A conventional 40 keV electron beam microscope was used for the direct electron-beam writing, which is connected to a design computer by digital-to-analog converter. Polymethylmethacrylate with a thickness of about 400 nm was used as a resist material. To achieve the high aspect ratio and better interface quality, we have used multiple-pass electron beam writing technique with special design. As a result, we could obtain an electron beam writing pattern with a linewidth of about 60 nm and an aspect ratio of about 1:7.

Proceedings of 2002 International Conference on Semiconductor
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