Ion Beam Lithography Using Membrane Masks

Young Suk Kim, Wan Hong, Hyung Joo Woo, Han Woo Choi, Gi Dong Kim, Jin Ho Lee and Samkeun Lee1

Ion Beam Laboratory, Korea Institute of Geoscience and Mineral Resources, Gajeongdong 30, Yuseonggu, Daejeon 305-350, Korea
1Department of Chemistry, Daejeon University, Daejeon 300-716, Korea


Ion beam lithography was performed using 450-500 keV protons and membrane masks in order to show its good potential as a next generation lithography (NGL) tool. By both simulation and experiment using channeling mask, it is shown that a sub 100 nm pattern can be generated with practical mask-to-wafer distance (~10 um). The angular distribution of protons emerging from the channeling mask was measured to show a very narrow width, which is of vital importance for good lateral line definition. A computer simulation was performed to simulate the proton dose distribution in the resist and to optimize the mask thickness. A comprehensive procedure for fabricating a channeling mask is described. The image replication of the mask pattern at the resist by proton irradiation shows the good potential of the method as a NGL tool.

Keywords : ion beam lithography, proton beam, membrane mask, channeling mask, angular spread

Jap. J. Appl. Phys., 41(2002)4141

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